Samsung Galaxy S8 rumours : 6GB RAM, 256 GB storage, Snapdragon 835

Samsung Galaxy S8 rumours have emerged once more, and they are extremely encouraging. In the aftermath of the Galaxy Note 7 disaster, Samsung appears to be going for broke, preparing possibly the most formidable flagship device it has ever created. For one, it appears like Samsung would be utilizing the most advanced next-generation mobile chipset from Qualcomm for the Galaxy S8, making the device the first of a new generation of flagship devices.


A report from Chinese publication Anzhuo has stated that the next flagship device from the South Korean tech giant would carry Qualcomm’s next-generation mobile chipset, the insanely fast and powerful Snapdragon 835. The 10nm FinFET technology used on the Snapdragon 835 allows for greater performance and lower power consumption, compared to older chip models. This may coincide with support for greater RAM capacities on smartphones.

Snapdragon 835 isn’t the only processor rumoured for the Galaxy S8, another being Samsung’s own in-house Exynos 8895.

Dutch site TechTastic found rumblings on Weibo concerning the Galaxy S8’s storage. Apparently, the phone will come in a 256GB version, which marks a stark departure from last year’s Galaxy S7 which featured 32GB of onboard storage along with a microSD slot supporting upto 256GB. It’s possible that there might not be a microSD slot this year, again, which makes sense for a phone with 256GB of storage assuming the rumours turn out to be true.

The site also notes that the phone is rumoured to have 6GB of RAM, a significant increase compared to Samsung’s 2016 flagship smartphones.

The Galaxy S8 is shaping up to be another home-run which is something that Samsung is severely in need of after the well-documented Galaxy Note 7 debacle. If the rumours surrounding the Galaxy S8 turn out to be true, it could be a game changer.

What do you think?

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